Insulator Deposition Induced by Gas Field Ion Source (GFIS) Column: Ultrahigh Resistivity and High Resolution with ZEISS ORION NanoFab

Gallium focused ion beams and electron beams have been used for editing and repairing prototype integrated circuits in the semiconductor industry. With the introduction of gas-assisted FIB deposition and etching, more complex modifications can be made. This white paper demonstrates how the ORION NanoFab provides an attractive approach for fabricating state of the art nanoscale structures with high purity.