Raman and Photoluminescence Measurements on Laser Lithographically Written Structures in Silicon

Silicon (Si) plays an important role in semiconductor devices. During manufacturing, the structures in Si are traditionally generated using lithography. Confocal Raman and Photoluminescence (PL) imaging are useful tools for quality assurance to investigate stress and stress induced artifacts in Si of semiconductor devices. This application note describes the performance of system laser scribing, confocal Raman imaging and confocal PL imaging on a crystalline Si sample with a single microscope system.